发明名称 |
Method for forming a nitridized interface on a semiconductor substrate |
摘要 |
A surface treatment method for forming a fluorine-doped nitridized interface on a semiconductor substrate. The fluorine-doped nitridized interface may be formed using an ammonia plasma CVD process having a treatment gas doped with a fluorine component, such as carbon hexafluorine. The method may be employed as part of a LOCOS-based processing scheme in the manufacture of MOS semiconductor devices, such as DRAM devices.
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申请公布号 |
US6495477(B2) |
申请公布日期 |
2002.12.17 |
申请号 |
US20010862348 |
申请日期 |
2001.05.21 |
申请人 |
SAMSUNG AUSTIN SEMICONDUCTOR, LLC |
发明人 |
TAYLOR JONATHAN J.;JENDRESKY DAVID F. |
分类号 |
C23C16/34;C23C8/28;C23C8/36;C23C28/00;H01L21/314;H01L21/316;H01L21/318;H01L21/32;H01L21/321;H01L21/76;H01L21/762;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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