| 摘要 |
<p>1,079,309. Semi-conductor rectifiers. SIEMENS SCHUCKERTWERKE A.G. May 6, 1966 [June 15, 1965], No. 20294/66. Heading H1K. A semi-conductor rectifier comprises a mono crystalline silicon body with highly doped (greater than 10<SP>17</SP> atoms per c.c.) end regions of opposite conductivity types and intermediate regions which adjoin to form the PN junction, one intermediate region being uniformly and lightly doped and the other lightly doped adjacent the junction and heavily doped adjacent is associated end region. In the embodiment of Fig. 1, a weakly N-type silicon body 2 (50 to 150 ohm cms.) has a P-region 3 produced by diffusion of aluminium (and possibly also gallium) and two heavily doped regions 5 and 6 of N+ and P+ types respectively produced by alloying gold-antimony foil and aluminium. Molybdenum electrodes 10 and 8 are attached to the contact regions adjacent the highly doped regions. The impurity concentration in P- region 3 varies from approximately 10<SP>14</SP> adjacent the PN junction to about 10<SP>16</SP> or more adjacent end region 6 where the concentration is about 10<SP>19</SP>atoms per c.c. The edge of the PN junction is protected by alizarin lacquer layer 9. The intermediate N zone 2 is 150 to 250Á thick, and P-zone 3, 60 to 100Á, the first portion (7-13Á 'thick) having a relatively small variation in dopant concentration after which the concentration increases steeply until P+ zone 6 is reached. The layers may be produced by epitaxial deposition.</p> |
