发明名称 |
Dielectric structure and method of formation |
摘要 |
A dielectric structure, wherein two fully cured photoimageable dielectric (PID) layers of the structure are nonadhesively interfaced by a partially cured PID layer. The partially cured PID layer includes a power plane sandwiched between a first partially cured PID sheet and a second partially cured PID sheet. The fully cured PID layers each include an internal power plane, a plated via having a blind end conductively coupled to the internal power plane, and a plated via passing through the fully cured PID layer. The dielectric structure may further include a first PID film partially cured and nonadhesively coupled to one of the fully cured PID layers. The dialectric structure may further include a second PID film partially cured and nonadhesively coupled to the other fully cured PID layer.
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申请公布号 |
US6495239(B1) |
申请公布日期 |
2002.12.17 |
申请号 |
US19990458291 |
申请日期 |
1999.12.10 |
申请人 |
INTERNATIONAL BUSINESS CORPORATION |
发明人 |
BHATT ANILKUMAR C.;FUERNISS STEPHEN J.;MAGNUSON ROY H.;MARKOVICH VOYA R. |
分类号 |
B32B7/04;H05K3/00;H05K3/46;(IPC1-7):B32B3/10 |
主分类号 |
B32B7/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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