| 发明名称 |
Relaxed InxGa1-xAs buffers |
| 摘要 |
InxGa1-xAs structures with compositionally graded buffers grown with organometallic vapor phase epitaxy (OMPVE) on GaAs substrates. A semiconductor structure and a method of processing such a structure including providing a substrate of GaAs; and epitaxially growing a relaxed graded layer of InxGa1-xAs at a temperature ranging upwards from about 600° C.
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| 申请公布号 |
US6495868(B2) |
申请公布日期 |
2002.12.17 |
| 申请号 |
US20010804890 |
申请日期 |
2001.03.13 |
| 申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
FITZGERALD EUGENE A.;BULSARA MAYANK T. |
| 分类号 |
H01L21/205;H01L21/20;H01L21/338;H01L29/812;H01S5/323;(IPC1-7):H01L33/00;H01L29/78 |
主分类号 |
H01L21/205 |
| 代理机构 |
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| 主权项 |
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