| 发明名称 |
Method for manufacturing capacitor in semiconductor device |
| 摘要 |
The present invention discloses a method for manufacturing a capacitor of a semiconductor memory device.The disclosed present invention comprises steps of forming a lower electrode made of a conductive polysilicon film or a conductive amorphous silicon film on a semiconductor substrate; forming a nitride film over the lower electrode; depositing an amorphous TaON thin film over the nitride film; subjecting the amorphous TaON thin film to a thermal treatment to effect a crystallization thereof; and forming a laminated structure composed of a TiON film and a doped silicon film for an upper electrode on the crystallized TaON thin film.
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| 申请公布号 |
US6495414(B2) |
申请公布日期 |
2002.12.17 |
| 申请号 |
US20010867659 |
申请日期 |
2001.05.31 |
| 申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
HAN SEUNG KYU;PARK DONG SU |
| 分类号 |
C23C16/30;H01L21/02;H01L21/285;H01L21/314;H01L21/318;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
C23C16/30 |
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