| 摘要 |
This invention provides a metal capacitor with damascene structures. Before the thin-film capacitor is formed, the underlying interconnections, such as a first Cu wire and a second Cu wire, are fabricated with Cu by damascene processes. The thin-film capacitor composed of a first metal layer contacting the first Cu wire, a dielectric layer and a second metal layer is formed in an insulator and a stop layer. A first Cu damascene structure and a second Cu damascene structure are disposed on the thin-film capacitor and the second Cu wire, respectively.
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