| 摘要 |
A semiconductor device comprises a first insulating film which is formed on a semiconductor substrate and has a groove whose bottom does not reach said semiconductor substrate, and a capacitive element which is composed of a lower electrode of a first metal layer which is embedded in said groove, a capacitive insulating film of a second insulating film formed on said lower electrode, and an upper electrode of a second metal layer formed in a region where both said lower electrode and said capacitive insulating film are formed.
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