SEMI-PHYSICAL MODELING OF HEMT HIGH FREQUENCY NOISE EQUIVALENT CIRCUIT MODELS,申请号KR1020027014409-传众专利搜索

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发明名称	SEMI-PHYSICAL MODELING OF HEMT HIGH FREQUENCY NOISE EQUIVALENT CIRCUIT MODELS
摘要
申请公布号	KR20020093959(A)	申请公布日期	2002.12.16
申请号	KR1020027014409	申请日期	2002.10.25
申请人		发明人
分类号	H01L21/66	主分类号	H01L21/66
代理机构		代理人
主权项
地址

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