发明名称 COMPOUND SEMICONDUCTOR SWITCHING CIRCUIT DEVICE
摘要 PURPOSE: To solve the problem, in a mirror-like logic, in which a control terminal 1 is connected to a gate electrode of an FET 2 and a control terminal 2 is connected to a gate electrode of a gate electrode 1, a resistor having to be connected in an X-shape, the resistor is arranged the periphery of a chip, and resulting in a large chip size. CONSTITUTION: Two parallel resistors are arranged between a common input terminal and an FET. Further, the resistor is formed of an n+ type impurity region, and some FETs are arranged between a control terminal and an output terminal, thereby realizing a mirror switch circuit, having the same chip size as that of a normal pattern.
申请公布号 KR20020093613(A) 申请公布日期 2002.12.16
申请号 KR20020031857 申请日期 2002.06.07
申请人 SANYO ELECTRIC CO., LTD. 发明人 ASANO TETSURO;HIRAI TOSHIKAZU;SAKAKIBARA MIKITO
分类号 H01L21/822;H01L21/8232;H01L27/04;H01L27/06;H01L27/095;H03K17/00;H03K17/041;(IPC1-7):H01P1/16 主分类号 H01L21/822
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