SOLAR CELL USING COMPOUND SEMICONDUCTOR AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A solar cell using a compound semiconductor is provided to increase short circuit current, by forming a thin GaAs layer having a small area while using predetermined heat and pressure and by inserting the compound semiconductor into an intrinsic region of the solar cell of a p-i-n structure while using a compliant substrate like the GaAs layer. CONSTITUTION: N-GaAs(15) is formed on an N¬+-GaAs substrate(14). Predetermined heat and pressure is applied to the n-GaAs so that a covalent bond with the n-GaAs is carried out to form the GaAs layer. A compound semiconductor layer having an energy bandgap smaller than that of the GaAs layer and an GaAs layer are sequentially stacked on the GaAs layer at least twice to form a quantum well layer. P-GaAs(18) is formed on the quantum well layer. P-GaAs is doped to the p-GaAs to form p¬+-GaAs(20). Each electrode(22) is formed in the n¬+-GaAs substrate and the p¬+-GaAs.