METHOD FOR FABRICATING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a metal interconnection of a semiconductor device is provided to prevent a decrease of a dielectric characteristic of a low dielectric insulation layer, by forming a TiN layer as a capping layer of the metal interconnection while using a chemical vapor deposition(CVD) process. CONSTITUTION: A barrier layer(21), a metal layer(22) for interconnection and an anti-reflective coating(ARC) are sequentially deposited on a semiconductor substrate(11). The ARC, the metal layer for interconnection and the barrier layer are patterned to form the metal interconnection(30). The TiN layer as the capping layer of the metal interconnection is deposited on the semiconductor substrate including the metal interconnection by a CVD process. The TiN layer is blanket-etched to form a TiN spacer(31a) on both sidewalls of the metal interconnection.