发明名称 VAPOR DEPOSITION APPARATUS AND VAPOR DEPOSITION METHOD USING SUBSTRATE TRANSFER UNIT FOR TRANSFERRING ORGANIC SEMICONDUCTOR SUBSTRATE HAVING LARGE AREA
摘要 PURPOSE: A vapor deposition apparatus and method is provided to form a thin film having a uniform thickness in an efficient manner, while improving yield rate and shortening process time. CONSTITUTION: A vapor deposition apparatus comprises a plurality of organic material deposition chambers(22,24,26) for processing electroluminescence material passed through a substrate loading chamber(10) and a plasma processing chamber(12); a substrate transfer chamber(250) for transferring substrates into organic material deposition chambers; a substrate transfer unit(200) having a transfer rail mounted to the substrate transfer chamber for transferring substrates through doors(23a,24a,26a) connected to organic material deposition chambers; a metal deposition chamber(30) for forming a conductive film to be a cathode of an electroluminescence device; and a controller for moving the substrate transfer unit, and opening or shutting the doors connected to organic material deposition chambers and the metal deposition chamber. The substrate transfer unit, organic material deposition chambers and the metal deposition chamber operate independently in accordance with the command output from the controller.
申请公布号 KR20020093742(A) 申请公布日期 2002.12.16
申请号 KR20020073208 申请日期 2002.11.22
申请人 ANS INC. 发明人 BAE, GYEONG BIN;KIM, DONG SU
分类号 H05B33/10;(IPC1-7):H05B33/10 主分类号 H05B33/10
代理机构 代理人
主权项
地址