发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A semiconductor memory device is provided to reduce a chip area of a flash memory and noise. CONSTITUTION: A semiconductor memory device comprises an array(1) of memory cells each of which stores data depending on whether current pull-in is present or absent or whether it is large or small, and a plurality of sense lines to which read data of the memory cell array are transferred, and a reference sense line as commonly used for data sensing at the sense lines while being given a reference voltage for data sensing. And a sense amplifier array(5) has a plurality of sense amplifiers for amplifying a differential voltage between the plurality of sense lines and the reference sense line to thereby determine read data.
申请公布号 KR20020093593(A) 申请公布日期 2002.12.16
申请号 KR20020031632 申请日期 2002.06.05
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TAKANO YOSHINORI;WATANABE KENTARO
分类号 G11C7/06;G11C16/28;(IPC1-7):G11C7/06 主分类号 G11C7/06
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