发明名称 METHOD FOR MANUFACTURING IZO SPUTTERING TARGET
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method which improves productivity and reduces a cost by curtailing a manufacturing process of indium oxide-zinc oxide from powder starting materials without essentially impairing the characteristics as an IZO sputtering target. SOLUTION: In the manufacturing method for the IZO sputtering target, the powder starting material of indium oxide having a specific surface of 8-10 m<2> /g and zinc oxide having a specific surface of 2-4 m<2> /g, or a starting material essentially consisting of these are mixingly pulverized using a wet medium stirring mill and, after a post-pulverized specific surface is increased by 1.5-2.5 m<2> /g from the specific surface of the mixed powder starting materials, it is molded and sintered at 1,300-1,500 deg.C in an oxygen atmosphere.
申请公布号 JP2002356767(A) 申请公布日期 2002.12.13
申请号 JP20010161583 申请日期 2001.05.30
申请人 NIKKO MATERIALS CO LTD 发明人 KURIHARA TOSHIYA
分类号 C04B35/00;C04B35/453;C04B35/495;C04B35/622;C04B35/628;C23C14/34 主分类号 C04B35/00
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