| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which actualizes the excellent measurement precision of forward voltage drop characteristics by a low current. SOLUTION: The semiconductor device has a semiconductor substrate of a 1st conduction type, a cathode area of the 1st conduction type which is formed on the reverse side of the semiconductor substrate and has a cathode electrode formed on its reverse surface, a 1st anode area of a 2nd conduction type which is provided to form part of the top surface of the semiconductor substrate and has an anode electrode formed on its top surface, an outer peripheral area which is provided so s to surround the 1st anode area and functions to secure withstand voltage characteristics more than specified, and a terminal area which is provided so as to surround the outer peripheral area. In the 1st anode area, at lest one 2nd anode area is provide while electrically insulated from the 1st anode area and on the top surface of the 2nd anode area, an electrode is formed independently of the anode electrode on the 1st anode area.
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