| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride system semiconductor light-emitting element, having an In-containing layer whose In-composition is high, and whose in-composition fluctuation is small, and whose crystallinity is satisfactory as an active layer. SOLUTION: A GaN buffer layer 14, an n-type GaN contact layer 16, an n-type AlGaN clad layer 18, and an n-type GaN optical waveguide layer 20 are grown on a sapphire substrate 12, in the same way as in the conventional manner. Then, a Ga1-x Inx N well layer (x=0.22)/Ga1-y Iny N barrier layer (y=0.02), constituting an active layer 22 are grown in a nitride atmosphere at a growth temperature of 800 deg.C using MOCVD method. At the time of growth, the pressure division of raw gas, such as In is adjusted, so that the growth rate of the GaInN layer can be made higher than that of the optical waveguide layer, and that the agglomerate energy of the GaInN layer is made large. Then, a p-type GaN optical waveguide layer 24, a p-type AlGaN clad layer 26, and a p-type GaN contact layer 28 are grown, in the same way as in the conventional manner. At the growing of the optical waveguide layer 24, the growth rate of the optical waveguide layer is made the same or lower than that of the n-type optical waveguide layer 20. |
