| 摘要 |
PROBLEM TO BE SOLVED: To realize low power consumption, high speed writing, and stable operation in a magnetic memory device represented by a MRAM. SOLUTION: In the magnetic memory device, which is provided with a magneto resistive storage element 1, a first write line 2 inducing a magnetic field in the direction of easy magnetizing axis and a second write line 3 inducing a magnetic field in the direction of hard magnetizing axis, and reverses a magnetizing direction of the storage element 1 by a current magnetic field generated by them, the applying timing of a current pulse is controlled so that a current pulse holding time tBL in the first write line 2, a holding time tWL in the second write line 3, and time difference thold between them satisfy the relation of tBL= tWL+thold (thold >0).
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