| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which a fine pattern can be formed without increasing a chip area, to provide a semiconductor device, and to reduce the number of exposure steps. SOLUTION: A resist pattern 5 is formed in dimensions of an exposure resolution limit on a hard mask material film 4 on a film 3 to be processed. The material film 4 is processed by using the resist pattern 5 as a mask to form a hard mask pattern 6. A resist pattern 7 is formed which has an opening 7a for exposing a selected region 6a of the mask pattern 6 and covers an unselected region 6b. Only the mask pattern 6a exposed in the opening 7a is subjected to selective etching to make it narrower. The film 3 to be processed is etched by using the mask pattern 6 to form a pattern 8 of a film to be processed having a pattern portion 8b with a wide exposure resolution limit dimension, and a pattern portion 8a with a narrow dimension equal to the resolution limit or smaller. |
