| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for improving the performance level of the device by improving operating characteristics and reliability of a TFT formed by using a polycrystalline semiconductor film. SOLUTION: The method for manufacturing the semiconductor device comprises a first step of forming a first semiconductor film having an amorphous structure on an insulating surface, a second step of forming a first semiconductor film having a crystal structure and an oxide film on the first film by irradiating the first semiconductor films which has amorphous structure with a laser beam and crystallizing the first film, a third step of removing the oxide film, a fourth step of planarizing the surface of the first semiconductor film by irradiating with the beam in an inert gas atmosphere or in vacuum, a fifth step of forming a second semiconductor film having an amorphous structure on the first film having the crystal structure, and a sixth step of forming a second semiconductor film which has a crystal structure by irradiating the second film side, having the amorphous structure with the beam and crystallizing the second film.</p> |
