发明名称 APPARATUS FOR MANUFACTURING THIN DIELECTRIC FILM AND DEPOSITION METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a thin dielectric film capable of analyzing the component of gaseous raw materials and having high composition stability and characteristic stability without needing the introducing of the gaseous raw materials into a deposition chamber prior to deposition. SOLUTION: A mass spectrometer 27 is disposed in a branch path C disposed in a raw material conveyance system B for conveying the gaseous thin dielectric film raw materials to the deposition chamber 21 for depositing the thin dielectric film by an MOCVD process and the composition of the gaseous thin dielectric film raw materials supplied to the deposition chamber 21 is analyzed. The components of the gaseous thin dielectric film raw materials supplied to the deposition chamber 21 is controlled in accordance with the result thereof. The concentration ratio of the each raw material components in the gaseous thin dielectric film raw materials and a carrier gas component is analyzed by the mass spectrometer 27 and the amount of raw material vaporization is controlled in accordance with the result thereof.
申请公布号 JP2002356779(A) 申请公布日期 2002.12.13
申请号 JP20010160549 申请日期 2001.05.29
申请人 MURATA MFG CO LTD 发明人 TAKESHIMA YUTAKA
分类号 C23C16/52;H01G13/00;(IPC1-7):C23C16/52 主分类号 C23C16/52
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