| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory cell structure in which the tolerance of a magnetization inversion current can be extended in order to more improve mass production yield, storage capacity, an access time, or the like of a magnetic memory device than heretofore. SOLUTION: In the magnetic memory device, which is provided with magneto resistive storage elements 1 arranged in a matrix shape and write lines 20, 30 arranged for every row and column and reverses a magnetizing direction of each storage element 1 selectively by a current magnetic field generated by the write lines 20, 30, in at least either of write lines 20, 30 for every row or column, its current path can be switched by main lines 21, 31 arranged adacently to the storage elements 1 and bypass lines 22, 32 arranged apart from the storage elements 1.
|
