| 摘要 |
PROBLEM TO BE SOLVED: To manufacture an infrared light emitting diode having a high emitting power output under a condition where the diode is fed with a low current of 0.1-1 mA and a long light emitting wavelength of 940 nm which is equivalent to or longer than that of the conventional GaAs LED. SOLUTION: An epitaxial wafer for light emitting diode is manufactured by the slowly cooling liquid phase epitaxial growth method by utilizing the NP natural inversion of Si which is an amphoteric impurity. In the wafer, the In composition x in the PN junction interface between an N-type GaInAlAs layer and a P-type GaInAlAs layer is controlled within the range of 0.002<=x<=0.012, preferably, 0.003<=x<=0.010. More preferably, the Si concentration in the interface is controlled most suitably within the range from 2.0×10<19> cm<-3> to 6×10<19> cm<-3> , and the Al composition in the interface is also controlled most suitably within the range of 0.02<=y<=0.10. |
