| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element, having a highly precise and easily manufacturable ARROW structure. SOLUTION: An n-In0.49 Ga0.51 P lower clad layer 2, an n- or i-Inx1 Ga1-x1 As1-y1 Py1 lower optical waveguide layer 3, an Inx3 Ga1-x3 As1-y3 Py3 compressed distortion quantum well active layer 4, p- or i-Inx1 Ga1-x1 As1-y1 Py1 upper optical waveguide layer 5, a p-In0.49 Ga0.51 P upper first clad layer 6, and a p-GaAs first etching- preventing layer 7, are laminated on an n-GaAs substrate 1. Then, a p-Inx8 Ga1-x8 P second etching-preventing layer 8 and an n-TaAs current constriction layer 9, whose openings are formed in a current injection area 20 having a width dc and regions having a width dc/2 separated by db1 at the both sides of the current injection region 20 are formed, and a p-Inx9 Ga1-x9 P third etching- preventing layer 10 is grown. A p-GaAs forth etching-preventing layer 11 and an n-In0.49 Ga0.51 P current constriction layer 12, whose opening is formed in the current injection region 20 are formed on the third etching-preventing layer 10, and a p-In0.49 Ga0.51 P upper second clad layer 13 and a p-GaAs contact layer 14 are laminated.
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