| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of making an electrode used for a III-V compound semiconductor transparent. SOLUTION: In this method, the electrode used for a III-V compound semiconductor expressed by Inx Gay Alz N (wherein, x+y+z=1, 0<=x<=1, 0<=y<=1, and 0<=z<=1) is made transparent. In this method, the electrode is made transparent by forming the material of the electrode on the III-V compound semiconductor and heat-treating the material at a temperature of >=400 deg.C after a protective layer is formed on the material (1). Alternatively, in the method (1), the heat treatment is performed at a temperature between 600 deg.C and 1,100 deg.C (2) and in the method (1) or (2) the x is changed to 0.1<=x<=1 (3). In the methods (1) to (3), the protective layer is composed of at least one oxide selected from among a group of silicon oxide, silicon nitride, and tin-added indium oxide (4). |
