| 摘要 |
<p>PROBLEM TO BE SOLVED: To realize a semiconductor device which avoids a fatigue breakdown by relaxing a thermal stress and to provide a method for manufacturing the same. SOLUTION: The method for manufacturing the semiconductor device comprises the steps of standing a wire bump 5 on a wiring pattern layer 2 via a contact hole CH perforated at an insulating film layer 3 of an interposer substrate 1, filling an elastic resin 11 in the hole CH, and forming a bump electrode in which a root part of the wire bump 5 is resin-fixed. Thus, as a result that the root of the bump 5 is embedded in the resin 11, the thermal stress can be relaxed while holding a sufficient strength.</p> |
