| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride based semiconductor light-emitting element, having a process for growing an In-containing layer at a growth temperature, which is higher than a conventional manner, while suppressing peel off of indium. SOLUTION: A GaN buffer layer 14, an n-type GaN contact layer 16, an n-type AlGaN clad layer 18, and an n-type GaN optical waveguide layer 20, are successively grown on a (c) surface sapphire substrate 12 at 1,000 deg.C by an MOCVD method, in the same way as conventional manner. Then, a Ga1-x Inx N well layer (for example, x=0.22) and a Ga1-y Iny N barrier layer (for example, y=0.02), constituting an active layer 22 are grown on the optical waveguide layer, by using TBIn or EDMIN as an In-containing organic compound at 800 deg.C by the MOCVD method, so that a quantum well structure can be formed. Then, a p-type GaN optical waveguide layer 24, a p-type AlGaN clad layer 26, and a p-type GaN contact layer 28, are grown successively on the active layer at a 1,000 deg.C growth temperature.
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