METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a new method for manufacturing a semiconductor device, capable of forming an insulation film layer of proper quality. SOLUTION: The method for manufacturing the semiconductor device comprises the steps of supplying an HMDSO(hexamethyldisiloxane) as a stock material into a reaction chamber 11 of a low pressure CVD unit 10, in a state in which an insulating film 15a of a semiconductor substrate 15 in the chamber 11 is irradiated thereon with a vacuum ultraviolet ray, and supplying oxygen as an adding gas. Thus, the insulation film layer of proper quality, which indicates a low dielectric constant advantageous as an interlayer insulating film is formed on the insulation film.