发明名称 RESIN-SEALED SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To prevent a resin-sealed semiconductor device to be corrosively deteriorated or the like due to a metal ion in an invaded water. SOLUTION: An anion exchange resin for capturing an anion and a cation exchange resin for capturing a cation are uniformly dispersed in a surface protective film 103 of a mesa type chip 17. Particularly, the anion exchange resin is blended in a double amount as large as the cation exchange resin, and controlled to a pH of 8 to 10.</p>
申请公布号 JP2002359326(A) 申请公布日期 2002.12.13
申请号 JP20010166174 申请日期 2001.06.01
申请人 FUJI ELECTRIC CO LTD 发明人 AMANO AKIRA;FURUHATA HIROAKI;ITO HIROSHI;NOZAKI KATSUYUKI
分类号 H01L23/29;H01L23/31;(IPC1-7):H01L23/29 主分类号 H01L23/29
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