| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve display quality by reducing the voltage dependence of an auxiliary capacity, in a flat display unit provided with the auxiliary capacity. SOLUTION: The flat display unit comprises a thin-film semiconductor switching element formed on a substrate, a display electrode connected to the element, a semiconductor layer 126 for the auxiliary capacity electrically connected to the electrode, a dielectric layer 140 formed on the semiconductor layer for the capacity, and a metal layer 152 formed on the dielectric layer, in such a manner that the auxiliary capacity is constituted of the semiconductor layer 126, the dielectric layer 140 and the metal layer 152. In this unit, the semiconductor layer for the auxiliary capacity is subjected to impurity ion implantion in a high concentration over the entire surface.</p> |
