| 发明名称 |
METHOD FOR FORMING THIN-FILM TRANSISTOR |
| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for realizing a stable film formation by suppressing a change of a film forming state according to the number of times of film forming in the formation of a thin-film transistor. SOLUTION: The method for forming the thin-film transistor comprises the steps of executing a plurality of times of a step of using a plasma chemical vapor deposition process in the same depositing chamber, and executing gas cleaning of the depositing chamber and film performing, at each execution step of using the process.</p> |
| 申请公布号 |
JP2002359250(A) |
申请公布日期 |
2002.12.13 |
| 申请号 |
JP20010164389 |
申请日期 |
2001.05.31 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
TERADA MASATAKA |
| 分类号 |
G02F1/1368;H01L21/205;H01L21/302;H01L21/3065;H01L21/336;H01L29/786;(IPC1-7):H01L21/336;G02F1/136;H01L21/306 |
主分类号 |
G02F1/1368 |
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