METHOD FOR MANUFACTURING AND EVALUATING SILICON EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon epitaxial wafer having excellent GOI characteristics, and a method for evaluating the silicon epitaxial wafer by performing qualitative/quantitative analysis of Cu contained in the silicon epitaxial wafer with high sensitivity. SOLUTION: A film deposition process (step S13) for vapor phase growing a thin film of silicon single crystal on a silicon single crystal substrate while supplying material gas, and a cooling process (step S14) for switching the existing atmosphere of a silicon epitaxial wafer, on which a thin film of silicon single crystal is formed in the film deposition process, from a hydrogen atmosphere to a nitrogen atmosphere at a temperature of 400 deg.C or above while cooling are carried out in this order.