| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser diode, having a ridge shape in which ripples are not generated, regardless of low output or high output. SOLUTION: This method for manufacturing a nitride semiconductor laser diode is provided with a ridge, and formed with embedded films at the both sides of the ridge; the embedded films are formed by a process for forming the ridge, and for forming a first insulation film, whose absorption coefficient is high on the exposed face of a p-side nitride semiconductor layer of a region from which the upper part and sidewalls of the ridge are excluded; and a process for forming a second insulating film, whose absorption coefficient is low on the first insulation film and at the sidewalls of the ridge.
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