| 摘要 |
PROBLEM TO BE SOLVED: To overcome problems that, when SrBi2 Ta2 O9 (SBT) having excellent fatigue property is used as a ferroelectric layer to form a capacitive ferroelectric memory, a non-orientated film has inferior square-type characteristicity, and, in an orientated film, a polarization moment in an (a) axis direction cannot be effectively utilized since SBT is easily oriented to a (c) axis. SOLUTION: A buffer layer 12 made of a metal oxide and a lower electrode layer 13 made of a conductive oxide having a perovskite structure are epitaxially grown on an Si single crystal substrate 11. a ferroelectric layer 14 made of SBT is further grown epitaxially with its (c) axis tilted to 45-55 deg. from a direction perpendicular to the substrate.
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