| 摘要 |
PROBLEM TO BE SOLVED: To provide a superior method of heat-treating a semiconductor which overcomes the problems lying both in conventional hot-wall apparatus and lamp-heating apparatus, and to provide an apparatus used for the same. SOLUTION: This method is for heat-treatment of wafers 1, using a batch- type heat treatment apparatus. A cylindrical annular space 31 is formed around the periphery of a reaction tube 20, in which wafers 1 are loaded; the cylindrical annular space 31 is sealed with xenon gas on the inside, and a plurality of annular electrodes 32 are arranged in the cylindrical annular space 31, with specified mutual spacings in the axial direction of the cylindrical annular space 31; and heat treatment of the wafers 1 is performed by applying voltages to the annular electrodes 32, to make the xenon gas emit light in the cylindrical annular space 31.
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