| 摘要 |
1,080,632. Semi-conductor devices. WESTINGHOUSE ELECTRIC CORPORATION. Feb. 15, 1966 [March 1, 1965], No. 6524/66. Heading H1K. A multi-region semiconductor device comprises a mounting member (52, Fig. 4, not shown) of good thermally and electrically conductive material having a flat surface (56) supporting a transistor (10). The transistor, shown in Fig. 1, is formed from a semi-conductor wafer 12 of one conductivity type and has a collector region 14 of opposite conductivity type defining a P-N junction extending substantially parallel to the major wafer surfaces over the entire wafer area, a base region 15 comprising concentric sections 16, 18, 20 of the wafer, and an emitter region 21 comprising concentric rings 22, 24 of the opposite conductivity type. A pair of semicircular electrodes 30, 32, Fig. 2, having projections 34-44 of corresponding shape to the base and emitter regions, are placed in contact with the wafer surface and are loaded by means of a spring (84) which is held by a snap ring (88) in a tubular inner housing (64) fixed to the mounting member (52). The electrodes are insulated from the housing and from each other by insulating members (72, 74). The whole assembly within the inner housing may be sprayed with silicone varnish, openings (68) in the housing wall being provided for this purpose, and the device may be encapsulated in an outer housing (90) which may contain a dessicant. The transistor may be formed from a silicon or germanium wafer 12 that has been doped with N-type impurities such as antimony, phosphorus or arsenic or P-type impurities such as gallium, aluminium, indium or boron. The collector region 14 and emitter region 21 may be formed by alloying suitable doped gold foil into the wafer surface, and the base region 15 may have a layer of undoped gold foil in ohmic contact with the wafer. The wafer is attached to an electrode 26 made of molybdenum or tungsten which may be gold plated. The mounting member (52) may be made of copper. |
