| 摘要 |
PROBLEM TO BE SOLVED: To reduce the influence of a parasitic capacitance caused by high frequency signals passing in an insulation substrate to improve the high frequency characteristics of a thin film capacitor formed on the substrate. SOLUTION: The insulation substrate uses a silicon wafer, and a hollow is formed in a lower portion of the capacitor to prevent high frequency signals from passing through the substrate using a silicon anisotropic etching technique.
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