发明名称 SILICON CARBIDE BASED POROUS COMPACT AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a silicon carbide based porous compact and a method for manufacturing the same which is high in porosity, high in thermal conductivity, moreover heighten in strength, as well as capable of producing with a low cost. SOLUTION: The silicon carbide based porous compact consists of silicon carbide grain and metallic silicon to be an aggregate. A mean pore diameter of silicon carbide based porous compact is larger than a mean grain diameter of silicon carbide grains by >=2.5 times. The silicon carbide based porous compact is manufactured by forming a material obtained by mixing and kneading a raw material of silicon carbide grain, metallic silicon and an organic binder, into predetermined shape, the obtained compact is preliminary fired to eliminate organic binder in the compact, then the compact is normally fired.
申请公布号 JP2002356383(A) 申请公布日期 2002.12.13
申请号 JP20020061989 申请日期 2002.03.07
申请人 NGK INSULATORS LTD 发明人 TOMITA TAKAHIRO;TABUCHI YUICHIRO;ICHIKAWA SHUICHI;HARADA SETSU
分类号 B01D39/00;B01D39/20;B01D53/86;B01J27/224;B01J32/00;B01J35/04;C04B35/565;C04B38/00 主分类号 B01D39/00
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