| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for totally compensating and stabilizing defects by not only through hydrogenation but also taking the manufacturing process of TFT into account, to suppress the characteristic variation of a TFT manufactured using a polysilicon film, and to enhance the performance of an electronic device manufactured using the TFT. SOLUTION: The method for manufacturing a semiconductor device comprises steps for forming an amorphous semiconductor film on a substrate, crystallizing the amorphous semiconductor film to form a polycrystalline semiconductor film, heat-treating the polycrystalline semiconductor film in an oxidizing atmosphere by an instantaneous thermal annealing method, and then removing an oxide film formed on the polycrystalline semiconductor film wherein oxygen is added to the polycrystalline semiconductor film by the heat treatment.
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