| 摘要 |
PROBLEM TO BE SOLVED: To raise the doping level of a semiconductor material. SOLUTION: The semiconductor material contains at least one group III-V region doped with a p-type dopant. The p-type dopant contains a first p-type dopant and at least one second p-type dopant and an impurity. The first p-type dopant is a semiconductor material having an atomic radius which is different from those of the second p-type dopants and impurity, so that local stresses in at least one group III-V region caused by the first p-type dopant may be compensated by local stresses in at least one group III-V region caused by at least one second p-type dopant and impurity and, in addition, the density of the first p-type dopant in at least one group III-V region may be increased. |
