| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film element which can easily improve leakage current characteristic at a low cost. SOLUTION: This thin-film element is formed, by forming an electrode 12 and a dielectric thin film 13 in order on a base substrate 11. The dielectric thin film 13 has columnar crystal particles of two kinds of Perovskite oxide, having a (111) face and a (110) face as alignment surfaces and the electrode 12 is made of metal, having a (111) face as an alignment surface; and the (111) face of crystal phase of the dielectric thin film 13 is lattice-matched on part of the (111) face of crystal phase of the electrode 12, and the (110) face is aligned preferentially with the in-surface direction of the dielectric thin film 13.
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