INTEGRATED SEMICONDUCTOR DEVICES FOR INTERACTING WITH OPTICAL STORAGE MEDIA

摘要

High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. The compliant substrate includes an accommodating buffer layer over a portion of a silicon wafer (254). The accommodating buffer layer (260) is a layer of monocrystalline oxide spaced apart from the portion of silicon wafer by an amorphous interface layer (262) of silicon oxide. The amorphous interface layer (262) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (260). A device structure (250) for interacting with optical storage media (300) is formed overlying the portion of silicon wafer (254). Portions or an entirety of the device structure (250) can also overly the accommodating buffer layer (260) , or the portion of the silicon wafer (254).