发明名称 |
In-situ pad and wafer cleaning during chemical mechanical polishing |
摘要 |
A method for in-situ cleaning a polishing pad and a wafer surface simultaneously during copper chemical mechanical polishing and an apparatus for carrying out such method are disclosed. The method is carried out by dispensing an acid-containing solution onto a top surface of a polishing pad while the wafer is rotated against the polishing pad without any slurry solution being dispensed. The acid-containing solution may be advantageously formed by diluting an acid such as citric acid, HCOOH, CH3COOH, HNO3, H2SO4 and HF to a concentration of less than 10 wt. % acid, preferably less than 5 wt. % acid, and more preferably less than 1 wt. % acid. The acid-containing solution may be dispensed onto a top surface of the polishing pad for a time period between about 30 sec. and about 300 sec.
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申请公布号 |
US2002187731(A1) |
申请公布日期 |
2002.12.12 |
申请号 |
US20010876447 |
申请日期 |
2001.06.07 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN YING-HO;CHIOU WEN-CHIH;LIN CHENG-CHUNG;JANG SYUN-MING |
分类号 |
B24B37/04;B24B53/007;B24B57/02;C11D7/08;C11D7/26;C11D11/00;(IPC1-7):B24B1/00;B24B7/19 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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