| 摘要 |
<p>A silicon-on-insulator (SOI) field effect transister (FEI) comprises a silicon substrate having silicon layer on top of a buried oxide layer having doped regions and an undoped region. The doped region has a dielectric constant different from the dielectric constant of the doped regions. A body also in the silicon layer separates the source/drains in the silicon layer. The source/drains are aligned over the doped regions and the body is aligned over the undoped region. A gate dielectric is on top of the body and a gate conductor is on top of the gate dielectric.</p> |
