RADIO FREQUENCY SEMICONDUCTOR STRUCTURE

摘要

High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers (26). The compliant substrate comprises an accommodating buffer layer (24) that is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer (28) permits the growth of a high quality monocrystalline oxide accommodating buffer layer (24). The accommodating buffer layer (24) is lattice matched to both the underlying silicon wafer (22) and the overlying monocrystalline material layer (26). The fabrication of on chip high frequency communications devices (100) such as direct conversion and sampling circuits with direct interface to high speed compound semiconductor material (26) in integrated circuits for high speed data acquisition and antenna interface is disclosed for direct coupling of RF signals in single chip applications.