THIN FILM SOLAR CELL USING SURFACE MODIFIED INDIUM TIN OXIDE AND METHOD FOR PREPARING THE SAME

摘要

PURPOSE: A thin film solar cell using a surface modified indium tin oxide and method for preparing the same are provided to improve a light transmission rate and a surface flatness rate of an n-type semiconductor by forming a surface modified layer on an indium tin oxide layer as a front electrode. CONSTITUTION: A front electrode(13) is formed on a glass substrate(11). The front electrode(13) has thickness of 1000 to 5000 angstrom. A surface modified layer(14) is formed by irradiating ions on the front electrode(13). The surface modified layer(14) has thickness of 30 angstrom. An n-type semiconductor layer(15) is formed on a surface of the surface modified layer(14). The n-type semiconductor layer(15) is formed by using a CBD(Chemical Bath Deposition) method. A p-type semiconductor layer(17) is formed on the n-type semiconductor layer(15). The p-type semiconductor layer(17) is formed by one of CdTe, Hg1-xCdxTe, CuInSe2, Cu(InGa)Se2, and CuInS2. A rear electrode(19) as an ohmic contact layer is formed on the p-type semiconductor layer(17).