发明名称 |
Apparatus and method for measuring substrate biasing during plasma processing of a substrate |
摘要 |
A processing system for processing a substrate with a plasma comprises a processing chamber configured for containing a plasma and a substrate support. Electrodes are coupled to the substrate support and an RF power source is coupled to each of the electrodes for biasing the electrodes to create a DC bias on a substrate positioned on the supporting surface. Multiple voltage measurement circuits are electrically coupled to the RF power source and the electrodes to measure voltages at multiple points. A precursor determines the DC bias levels of the electrodes based on the multiple measurement points.
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申请公布号 |
US2002186018(A1) |
申请公布日期 |
2002.12.12 |
申请号 |
US20010875341 |
申请日期 |
2001.06.06 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
SILL EDWARD L.;JONES WILLIAM D.;BALDWIN CRAIG T. |
分类号 |
H05H1/46;B01J19/08;C23C16/50;H01J37/32;H01L21/205;H01L21/3065;(IPC1-7):G01L21/34 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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