发明名称 |
Method for manufacturing silicon mirror wafer, silicon mirror wafer, and heat treatment furnace |
摘要 |
There are provided a manufacturing process for a mirror finished silicon wafer capable of manufacturing a mirror finished silicon wafer, having an excellent quality in which grown-in crystal defects are annihilated by heat-treating the silicon mirror finished wafer in a heat treatment in a gas atmosphere of high safety at a lower cost without selection of a heat treatment furnace for use in the heat treatment, a mirror finished silicon wafer having an excellent quality, and a heat treatment furnace preferably used in the manufacturing process. In the manufacturing process for a mirror finished silicon wafer comprising the steps of: connecting a reaction tube of a heat treatment furnace to a supply line for a non-oxidative raw material gas via a connection portion; supplying a non-oxidative gas into the reaction tube through the supply line and the connection portion; and heat-treating the mirror finished silicon wafer in the heat treatment furnace in an atmosphere of a non-oxidative gas, wherein a content of impurities in the non-oxidative gas supplied into the reaction tube is 3 ppm or less.
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申请公布号 |
US2002187658(A1) |
申请公布日期 |
2002.12.12 |
申请号 |
US20010979084 |
申请日期 |
2001.11.16 |
申请人 |
KOBAYASHI NORIHIRO;AKIYAMA SHOJI |
发明人 |
KOBAYASHI NORIHIRO;AKIYAMA SHOJI |
分类号 |
C30B33/00;H01L21/324;(IPC1-7):H01L21/44;H01L21/26;H01L21/42;H01L21/461;H01L21/302;H01L21/477 |
主分类号 |
C30B33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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