| 摘要 |
<p>A single crystal silicon carbide which has no crystallite grain boundary inside and contains micro-pipe defects in a density of 1/cm2 or less, and preferably has a terrace having a width of 10 μm or more and a multi-molecular layer step having a three-molecular layer as the minimum unit; a method for producing the single crystal silicon carbide which comprises a high temperature liquid phase growth method using an extremely thin Si melt layer. The method is advantageous in that it does not require precise control of the temperature difference between the surface of a growing crystal and a polycrystalline raw material and that the addition of impurities can be controlled.</p> |
