Halbleiterstruktur mit ESD-Schutzeinrichtung

摘要

The invention relates to a semiconductor structure, comprising a substrate (102), a component layer (104) located on the substrate (102) and a contact (108). Said semiconductor structure has an ESD protection device (144a, 144), which is positioned between the substrate (102) and the contact (108) in such a way that if ESD occurs, the ESD protection device (144a, 144b) causes a cutout to the contact (108).