发明名称 LASER DIODE WITH AN INTERNAL MIRROR
摘要 A semiconductor laser (10) has a distributed feedback laser section (12) and an amplifier section (14). The amplifier section (14) may be tapered to lowe r the optical power density particularly at an output facet (18) of the laser. The semiconductor laser (10) also includes a reflective element (24) that reflects light (17) from the distributed feedback laser section (12) to the amplifier section (14). The reflective element (24) folds the optical path (Op) of the light beam (17). Folding the optical path (Op) allows the amplifier section (14) area to be increased without enlarging the semiconductor die size. The larger amplifier section (14) will increase the output power of the laser. Likewise the reflective element (24) will allow t he semiconductor die size to be reduced without decreasing the optical power of the laser.
申请公布号 CA2447535(A1) 申请公布日期 2002.12.12
申请号 CA20022447535 申请日期 2002.06.05
申请人 QUINTESSENCE PHOTONICS CORPORATION 发明人 UNGAR, JEFFREY E.
分类号 H01S5/026;H01S5/022;H01S5/10;H01S5/12;H01S5/125;H01S5/50;(IPC1-7):H01S3/08;H01S5/00;H01S3/081 主分类号 H01S5/026
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